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MJE13009 transistor is a semiconductor device made of silicon material. It is an NPN transistor that is mainly used for switching and amplification purposes. The power dissipation of this transistor is 100W and the emitter-base voltage is 9V which is the amount of voltage needed to bias the device.
The MJE13009 transistor carries three terminals known as:
All these three terminals are used for external connection with the electrical/electronics circuit. The given below figure shows the pinout diagram of MJE13009.
The pins carry different doping concentrations. The collector terminal is a lightly doped terminal while the emitter terminal is a highly doped terminal compared to other terminals. Similarly, the base pin is 10 times more doped than the collector pin.
The base terminal is responsible for the overall transistor action (active and deactivate). When voltage is applied at the base pin of the transistor, current will start flowing from the collector to the emitter terminal. biasing depends always on the base voltage in all transistors.
You can replace the MJE13009 with the KSE13009, FJP13009, or MJE13009G.
The absolute maximum ratings of MJE13009 are given in the table given below
| Absolute Maximum Ratings of MJE13009 | ||||
|---|---|---|---|---|
| Pin No. | Pin Description | Pin Name | ||
| 1 | Collector-emitter voltage is | 400V | ||
| 2 | Collector-base voltage is | 700V | ||
| 3 | Base-emitter voltage is | 9V | ||
| 4 | Collector current is | 12A | ||
| 5 | Power dissipation is | 100W | ||
| 6 | The Base current | 6A | ||
| 7 | Operating and storage junction temperature range | -55 to 150C | ||
