The Bc847W transistor is NPN bipolar junction device. It is the most commonly used SMD transistor. Characteristics or features of the Bc847W is same like NPN transistor and other technical detail is given below.
Features of Bc847W Transistor
- Type of Bc548 – NPN
- Available Package – SOT-323
- Max Collector-Emitter Voltage: 45 Vdc
- Max Collector-Base Voltage: 50 Vdc
- Emitter-Base Voltage: 6 Vdc
- Collector Current: 0.1 A
- Collector Dissipation: 0.2 W
- DC Current Gain (hfe) :110 – 800
- Transition Frequency:150 MHz
- Low noise Figure:2 dB
- Operating & Storage Junction Temperature Range: 65 to +150 °C
Pin Configuration (Pinout) of the BC847W
Pin configurations of this transistor are given below the pictures.
Classification of hFE
The current gain of Bc847W may have between 110 and 800. Bc847W has the following gain range:
PNP Complementary transistor
BC857 is the complementary PNP of BC847W
Replacement and equivalent transistor
BC847W can be replaced with BC846W or BC850W
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